| PART |
Description |
Maker |
| 93334L-S08-R 93334L-S08-T 93334-S08-R 93334-S08-T |
HIGH ENERGY IGNITION CIRCUIT SPECIALTY ANALOG CIRCUIT, PDSO8
|
Unisonic Technologies Co., Ltd.
友顺科技股份有限公司
UTC[Unisonic Technologies]
|
| MCCF3334 |
HIGH ENERGY IGNITION CIRCUIT
|
Motorola
|
| ISL9V5036S3S04 ISL9V5036S3S ISL9V5036P3 ISL9V5036S |
EcoSPARKTM 500mJ, 360V, N-Channel Ignition IGBT
360V EcoSPARK 500mJ N-Channel Ignition IGBT
31A, 360V Logic Level, Voltage Clamped, Avalanche Energy Rated, ESD Protected IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|
| NGB18N40CLBT4 |
Ignition IGBT in D2ak (Gen3) with Improved SCIS Energy and Vce(on)
18 Amps, 400 Volts N-Channel D2PAK
|
ON Semiconductor
|
| ISL9V2040S3ST ISL9V2040D3S04 ISL9V2040D3ST ISL9V20 |
10A, 400V Logic Level, Voltage Clamped, Avalanche Energy Rated, ESD Protected IGBT
EcoSPARKTM 200mJ, 400V, N-Channel Ignition IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|
| MC79076DW MCCF79076 MC79076 ON1779 |
From old datasheet system
ELECTRONIC IGNITION CONTROL CIRCUIT
|
MOTOROLA[Motorola, Inc]
ON Semi
|
| MTP10N60E7 ON2541 MTP10N60E7-D |
TMOS 7 E-FET™ High Energy Power FET
TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 10 AMPERES 600 VOLTS
|
ON Semiconductor
|
| BYX134GPL |
HIGH VOLTAGE AUTOMOTIVE IGNITION DIODE
|
EIC discrete Semiconductors
|
| BYX134GP |
High-voltage car ignition diodes
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| VB927T |
HIGH VOLTAGE IGNITION COIL DRIVER POWER I.C.
|
STMICROELECTRONICS[STMicroelectronics]
|
| VB325SP VB325 VB325SP13TR VB325SPTR-E |
HIGH VOLTAGE IGNITION COIL DRIVER POWER I.C.
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| 2CL0504 |
High Voltage Diodes for Car Ignition Systems
|
SiPower Inc.
|
